Yuruk, Reyyan KayakTutunculer, Hayriye2025-02-152025-02-1520190008-42041208-6045https://doi.org/10.1139/cjp-2018-0579https://hdl.handle.net/20.500.12514/6021Kavak Yuruk, Reyyan/0000-0002-6637-6954The wide-bandgap semiconductors, which have the advantages of radiation resistance and high carrier mobility, have gained increased research attention in recent years for the conversion nuclear battery. Nevertheless, when a wide-bandgap semiconductor is used, the collection efficiency and current are reduced, even though the open circuit voltage is increased. In this research, a heterojunction photovoltaic cell is used to increase collection efficiency and power in the betavoltaic battery. A theoretical investigation of the electrical performance has been carried out on Ni-63/GaN and Ni-63/GaN-Si betavoltaic cells. The effects of doping concentration and junction depth on the maximum power are examined. By optimizing the doping concentration and junction depth, a high-efficiency heterojunction betavoltaic microbattery can be achieved. The maximum power is calculated as 22.90 nW/cm(2) using 1 mCi Ni-63 beta source and GaN-Si heterojunction with junction depth of 0.1 mu m and doping concentrations of N-a = 4 x 10(17) cm(-3) and N-d = 4 x 10(16) cm(-3) in the emitter and the base region, respectively.en10.1139/cjp-2018-0579info:eu-repo/semantics/closedAccessNuclear MicrobatteryGan BetavoltaicCollection EfficiencyGan-Si HeterojunctionNi-63Article97910311038Q4Q3WOS:0004841592000152-s2.0-8507193408710