Browsing by Author "Tutunculer, Hayriye"

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Investig. ion of the Effect of Beta Source and Phosphors on Photovoltaic Cells
(AMER INST PHYSICS, 2017) Yuruk, Reyyan Kayak; Tutunculer, Hayriye; Akkus, B; Oktem, Y; Dogan, GS; Guzelcimen, F
In this study, conversion of kinetic energy from the decay of a radioactive isotope to electricity is investigated by using the direct and the indirect conversion methods. In this context, simple nuclear battery models arc designed. Analysis for the effect of low-activity radiation from Pm147 and Sr90 beta sources on photovoltaic Si solar cell is presented. Beta radioluminescence nuclear battery models consist of a beta source, a phosphor layer and a solar cell. Phosphor layers with different mass thicknesses are prepared from ZnS:CuCl and SrAl2O4:Eu2+,Dy3+ phosphors. Both the influence of beta sources and the phosphor layers on battery performance is analyzed separately. Effect of beta sources, phosphors are observed on solar cell by measuring the short circuit current and open circuit voltage. The efficiency of the battery models is determined with the obtained results. Furthermore, short circuit current values are analyzed at various times during the irradiation.
Theoretical Investigation of High-Efficiency Gan-Si Heterojunction Betavoltaic Battery
(Canadian Science Publishing, Nrc Research Press, 2019) Yuruk, Reyyan Kayak; Tutunculer, Hayriye
The wide-bandgap semiconductors, which have the advantages of radiation resistance and high carrier mobility, have gained increased research attention in recent years for the conversion nuclear battery. Nevertheless, when a wide-bandgap semiconductor is used, the collection efficiency and current are reduced, even though the open circuit voltage is increased. In this research, a heterojunction photovoltaic cell is used to increase collection efficiency and power in the betavoltaic battery. A theoretical investigation of the electrical performance has been carried out on Ni-63/GaN and Ni-63/GaN-Si betavoltaic cells. The effects of doping concentration and junction depth on the maximum power are examined. By optimizing the doping concentration and junction depth, a high-efficiency heterojunction betavoltaic microbattery can be achieved. The maximum power is calculated as 22.90 nW/cm(2) using 1 mCi Ni-63 beta source and GaN-Si heterojunction with junction depth of 0.1 mu m and doping concentrations of N-a = 4 x 10(17) cm(-3) and N-d = 4 x 10(16) cm(-3) in the emitter and the base region, respectively.